FinFET device

专利名称：FinFET device

发明人：Chih-Hao Wang,Ching-Wei Tsai,Chin-Chi

Wang

申请号：US15150219申请日：20160509公开号：US09666672B2公开日：20170530

专利附图：

摘要：A device includes a first fin including a first semiconductor material. A firstdielectric layer is disposed over a top surface of the first fin. A sidewall of the firstdielectric layer has a dip-shape profile. A second dielectric layer is disposed along

sidewalls of the first fin. A top surface of the second dielectric layer is substantiallycoplanar with the top surface of the first fin. A second fin includes a second

semiconductor material different from the first semiconductor material. An isolationregion is disposed between the first fin and the second fin.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

代理机构：Haynes and Boone, LLP

更多信息请下载全文后查看