STS2NF100
N-CHANNEL 100V - 0.23 Ω - 6A SO-8
STripFET™ II POWER MOSFET
TYPESTS2NF100
ssss
VDSS100 V
RDS(on)<0.26 Ω
ID6 A
TYPICAL RDS(on) = 0.23 Ω
EXCEPTIONAL dv/dt CAPABILITY100 % AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATION
SO-8DESCRIPTION
This MOSFET series realized with STMicroelectronicsunique STripFET process has specifically been designedto minimize input capacitance and gate charge. It istherefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters forTelecom and Computer applications. It is also intendedfor any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
sHIGH-EFFICIENCY DC-DC CONVERTERSsUPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
SymbolVDSVDGRVGSID(•)IDIDM(••)PtotdV/dt (1)EAS (2)TstgTj
Parameter
Drain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 kΩ)Gate- source Voltage
Drain Current (continuous) at TC = 25°CDrain Current (continuous) at TC = 100°CDrain Current (pulsed)Total Dissipation at TC = 25°CDerating Factor
Peak Diode Recovery voltage slopeSingle Pulse Avalanche EnergyStorage Temperature
Max. Operating Junction Temperature
Value100100± 2021.382.50.01640200-65 to 175
(1) ISD ≤2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX(2) Starting Tj = 25 oC, ID = 3A, VDD = 50V
UnitVVVAAAWW/°CV/nsmJ°C
(••) Pulse width limited by safe operating area.(•) Current limited by the packageOctober 2002
.
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STS2NF100
THERMAL DATA
Rthj-amb
TjTstg
(*)Thermal Resistance Junction-ambientThermal Operating Junction-ambientStorage Temperature
50-55 to 150-55 to 150
°C/W°C°C
(*) Mounted on FR-4 board (t [ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
Breakdown VoltageZero Gate Voltage
Drain Current (VGS = 0)Gate-body LeakageCurrent (VDS = 0)
Test Conditions
ID = 250 µA, VGS = 0
VDS = Max Rating
VDS = Max Rating TC = 125°CVGS = ± 20 V
Min.100
110±100
Typ.
Max.
UnitVµAµAnA
ON (*)
SymbolVGS(th)RDS(on)
Parameter
Gate Threshold VoltageStatic Drain-source On Resistance
Test Conditions
VDS = VGS VGS = 10 V
ID = 250 µA ID = 1 A
Min.2
Typ.30.23
Max.40.26
UnitVΩ
DYNAMIC
Symbolgfs (*)CissCossCrss
Parameter
Forward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance
Test Conditions
VDS>ID(on)xRDS(on)max ID=1 AVDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.0.52804520
Max.
UnitSpFpFpF
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STS2NF100
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
Symboltd(on)trQgQgsQgd
Parameter
Turn-on Delay TimeRise Time
Total Gate ChargeGate-Source ChargeGate-Drain Charge
Test Conditions
ID = 1 AVDD = 50 V
RG=4.7 Ω VGS = 10 V(Resistive Load, Figure 3)VDD= 80V ID= 1A VGS=10V
Min.
Typ.610102.54
Max.
UnitnsnsnCnCnC
SWITCHING OFF
Symboltd(off)tftr(Voff)tftc
Parameter
Turn-off Delay TimeFall Time
Off-Voltage Rise TimeFall Time
Cross-over Time
Test Conditions
ID = 1 AVDD = 50 V
RG=4.7Ω, VGS = 10 V(Resistive Load, Figure 3)ID = 1 AVclamp = 80 V
RG=4.7Ω VGS = 10 V(Inductive Load, Figure 5)
Min.
Typ.20319815
Max.
Unitnsnsnsnsns
SOURCE DRAIN DIODE
SymbolISDISDM (•)VSD (*)trrQrrIRRM
Parameter
Source-drain Current
Source-drain Current (pulsed)Forward On VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 2 A
VGS = 0
701755
Test Conditions
Min.
Typ.
Max.6241.3
UnitAAVnsnCA
di/dt = 100A/µsISD = 2 A
VDD = 10 VTj = 150°C(see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.
Safe Operating AreaThermal Impedance3/8元器件交易网www.cecb2b.com
STS2NF100
Output CharacteristicsTransfer CharacteristicsTransconductanceStatic Drain-source On ResistanceGate Charge vs Gate-source VoltageCapacitance Variations4/8元器件交易网www.cecb2b.com
STS2NF100
Normalized Gate Threshold Voltage vs TemperatureNormalized on Resistance vs TemperatureSource-drain Diode Forward Characteristics.
..
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STS2NF100
Fig. 1: Unclamped Inductive Load Test CircuitFig. 2: Unclamped Inductive WaveformFig. 3: Switching Times Test Circuits For Resistive LoadFig. 4: Gate Charge test CircuitFig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times6/8
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STS2NF100SO-8 MECHANICAL DATADIM.MIN.Aa1a2a3bb1Cc1DEee3FLMS3.80.44.85.81.273.814.01.270.68 (max.)0.140.0155.06.20.650.350.190.250.1mmTYP.MAX.1.750.251.650.850.480.250.545 (typ.)0.1880.2280.0500.1500.1570.0500.0230.1960.2440.0250.0130.0070.0100.003MIN.inchTYP.MAX.0.0680.0090.0640.0330.0180.0100.01900160237/8元器件交易网www.cecb2b.com
STS2NF100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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