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STS2NF100资料

时间:2022-03-14 来源:飒榕旅游知识分享网
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STS2NF100

N-CHANNEL 100V - 0.23 Ω - 6A SO-8

STripFET™ II POWER MOSFET

TYPESTS2NF100

ssss

VDSS100 V

RDS(on)<0.26 Ω

ID6 A

TYPICAL RDS(on) = 0.23 Ω

EXCEPTIONAL dv/dt CAPABILITY100 % AVALANCHE TESTEDAPPLICATION ORIENTED CHARACTERIZATION

SO-8DESCRIPTION

This MOSFET series realized with STMicroelectronicsunique STripFET process has specifically been designedto minimize input capacitance and gate charge. It istherefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters forTelecom and Computer applications. It is also intendedfor any applications with low gate drive requirements.

INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS

sHIGH-EFFICIENCY DC-DC CONVERTERSsUPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

SymbolVDSVDGRVGSID(•)IDIDM(••)PtotdV/dt (1)EAS (2)TstgTj

Parameter

Drain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 kΩ)Gate- source Voltage

Drain Current (continuous) at TC = 25°CDrain Current (continuous) at TC = 100°CDrain Current (pulsed)Total Dissipation at TC = 25°CDerating Factor

Peak Diode Recovery voltage slopeSingle Pulse Avalanche EnergyStorage Temperature

Max. Operating Junction Temperature

Value100100± 2021.382.50.01640200-65 to 175

(1) ISD ≤2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX(2) Starting Tj = 25 oC, ID = 3A, VDD = 50V

UnitVVVAAAWW/°CV/nsmJ°C

(••) Pulse width limited by safe operating area.(•) Current limited by the packageOctober 2002

.

1/8

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STS2NF100

THERMAL DATA

Rthj-amb

TjTstg

(*)Thermal Resistance Junction-ambientThermal Operating Junction-ambientStorage Temperature

50-55 to 150-55 to 150

°C/W°C°C

(*) Mounted on FR-4 board (t [ 10 sec.)

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF

SymbolV(BR)DSSIDSSIGSS

Parameter

Drain-source

Breakdown VoltageZero Gate Voltage

Drain Current (VGS = 0)Gate-body LeakageCurrent (VDS = 0)

Test Conditions

ID = 250 µA, VGS = 0

VDS = Max Rating

VDS = Max Rating TC = 125°CVGS = ± 20 V

Min.100

110±100

Typ.

Max.

UnitVµAµAnA

ON (*)

SymbolVGS(th)RDS(on)

Parameter

Gate Threshold VoltageStatic Drain-source On Resistance

Test Conditions

VDS = VGS VGS = 10 V

ID = 250 µA ID = 1 A

Min.2

Typ.30.23

Max.40.26

UnitVΩ

DYNAMIC

Symbolgfs (*)CissCossCrss

Parameter

Forward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance

Test Conditions

VDS>ID(on)xRDS(on)max ID=1 AVDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.0.52804520

Max.

UnitSpFpFpF

2/8

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STS2NF100

ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON

Symboltd(on)trQgQgsQgd

Parameter

Turn-on Delay TimeRise Time

Total Gate ChargeGate-Source ChargeGate-Drain Charge

Test Conditions

ID = 1 AVDD = 50 V

RG=4.7 Ω VGS = 10 V(Resistive Load, Figure 3)VDD= 80V ID= 1A VGS=10V

Min.

Typ.610102.54

Max.

UnitnsnsnCnCnC

SWITCHING OFF

Symboltd(off)tftr(Voff)tftc

Parameter

Turn-off Delay TimeFall Time

Off-Voltage Rise TimeFall Time

Cross-over Time

Test Conditions

ID = 1 AVDD = 50 V

RG=4.7Ω, VGS = 10 V(Resistive Load, Figure 3)ID = 1 AVclamp = 80 V

RG=4.7Ω VGS = 10 V(Inductive Load, Figure 5)

Min.

Typ.20319815

Max.

Unitnsnsnsnsns

SOURCE DRAIN DIODE

SymbolISDISDM (•)VSD (*)trrQrrIRRM

Parameter

Source-drain Current

Source-drain Current (pulsed)Forward On VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery Current

ISD = 2 A

VGS = 0

701755

Test Conditions

Min.

Typ.

Max.6241.3

UnitAAVnsnCA

di/dt = 100A/µsISD = 2 A

VDD = 10 VTj = 150°C(see test circuit, Figure 5)

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.

Safe Operating AreaThermal Impedance3/8元器件交易网www.cecb2b.com

STS2NF100

Output CharacteristicsTransfer CharacteristicsTransconductanceStatic Drain-source On ResistanceGate Charge vs Gate-source VoltageCapacitance Variations4/8元器件交易网www.cecb2b.com

STS2NF100

Normalized Gate Threshold Voltage vs TemperatureNormalized on Resistance vs TemperatureSource-drain Diode Forward Characteristics.

..

5/8

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STS2NF100

Fig. 1: Unclamped Inductive Load Test CircuitFig. 2: Unclamped Inductive WaveformFig. 3: Switching Times Test Circuits For Resistive LoadFig. 4: Gate Charge test CircuitFig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times6/8

元器件交易网www.cecb2b.com

STS2NF100SO-8 MECHANICAL DATADIM.MIN.Aa1a2a3bb1Cc1DEee3FLMS3.80.44.85.81.273.814.01.270.68 (max.)0.140.0155.06.20.650.350.190.250.1mmTYP.MAX.1.750.251.650.850.480.250.545 (typ.)0.1880.2280.0500.1500.1570.0500.0230.1960.2440.0250.0130.0070.0100.003MIN.inchTYP.MAX.0.0680.0090.0640.0330.0180.0100.01900160237/8元器件交易网www.cecb2b.com

STS2NF100

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

® 2002 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.

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