Method for fabricating a thin film transistor with

专利名称：Method for fabricating a thin film transistor

with silicon oxynitride film and silicon nitridechannel passivation film for preventing aback channel effect

发明人：MIYAMOTO TAKASHI,TSUJIMURA

TAKATOSHI

申请号：US87136301申请日：20010531公开号：US6436742B2公开日：20020820

摘要：The present invention provides a thin film transistor (TFT) and a fabricationmethod thereof which suppresses the back channel effects in which a leakage currentflows between a source electrode and a drain electrode at times during a turn off stateof the TFT. A thin silicon oxynitride film 90 having a thickness preferably equal to or lessthan 50 Å is formed between an amorphous silicon layer 40 and a channel passivation film50 (a silicon nitride film) above a back channel region 100 between a source electrodeand a drain electrode of an inverted staggered type TFT to cause Si-O bonds to exist inan upper interface of the amorphous silicon layer. The Si-O bonds increase the Density ofStates in the back channel region and has an effect for suppressing the leakage currentthrough the back channel region 100 at times during the turn off of the TFT.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

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