New Product
SUU50N10-18P
Vishay Siliconix
SN-Channel 100-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)100
RDS(on) (Ω)0.0185 at VGS = 10 V
ID (A)a50
Qg (Typ.)48 nC
FEATURES
•TrenchFET® Power MOSFET •100 % Rg Tested •100 % UIS Tested
RoHSCOMPLIANT APPLICATIONS
•Primary Side Switch
TO-251S •Isolated DC/DC Converter
D Drain Connected toDrain-TabGDSG Top ViewOrdering Information: SUU50N10-18P-E3 (Lead (Pb)-free)S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter ymbol LimitUnit VDS100Drain-Source Voltage
V
VGS± 20Gate-Source Voltage
TC = 25 °C50aTC = 100 °C39
Continuous Drain Current (TJ = 150 °C)ID
TA = 25 °C8.2bTA = 100 °C5.8bA
IDMPulsed Drain Current100
TC = 25 °C50aISContinuous Source-Drain Diode Current
TA = 25 °C2.0bIASSingle Pulse Avalanche Current45
L = 0.1 mH
EASmJAvalanche Energy101
TC = 25 °C136.4TC = 100 °C68.2
Maximum Power DissipationWPD
TA = 25 °C3.0bTA = 100 °C1.5bTJ, Tstg°COperating Junction and Storage Temperature Range - 55 to 175
THERMAL RESISTANCE RATINGS
Parameter ymbol TypicalMaximumUnit bRthJASteady State4050Maximum Junction-to-Ambient
°C/W
RthJC0.851.1Maximum Junction-to-CaseSteady StateNotes:
a. Package limited.
b. Surface mounted on 1\" x 1\" FR4 board.Document Number: 68817S-81956-Rev. B, 25-Aug-08
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New Product
SUU50N10-18P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Static
Drain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source Leakage
Zero Gate Voltage Drain CurrentOn-State Drain CurrentaDrain-Source On-State ResistanceForward TransconductanceDynamicbInput CapacitanceOutput Capacitance
Reverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time
Turn-Off Delay TimeFall Time
Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current
IS
TC = 25 °C IS = 15 A
IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C
0.85801605723
501001.5120240
ISMPulse Diode Forward CurrentaSBody Diode VoltageVSDBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise Time
trrQrrtatb
AVnsnCns
CissCossQgQgs Rgtd(on) trtf
VDS = 50 V, VGS = 10 V, ID = 50 A
f = 1 MHz
VDS = 50 V, VGS = 0 V, f = 1 MHz
260023048161.612
2.520203515
ns
75
nCΩpF
aaParameter ymbol Test Conditions Min. Typ.Max.Unit VDSΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSSIDSSID(on) RDS(on) gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C
VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VDS = 15 V, ID = 15 A
50
0.01533
0.0185
2.5100
110- 12.5
5± 100150
VmV/°CVnAµAAΩS
Crss 80Qgd 1310VDD = 50 V, RL = 1.0 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ωtd(off) 188
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
www.vishay.com2Document Number: 68817S-81956-Rev. B, 25-Aug-08
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New ProductSUU50N10-18PVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted100VGS=10thru8V80ID- DrainCurrent(A)ID- DrainCurrent(A)VGS=7V601.62.01.2400.8TC=25 °C0.4TC=125 °CTC=-55 °C024681020VGS=6V00123450.0VDS-Drain-to-SourceVoltage(V)VGS-Gate-to-SourceVoltage(V)Output Characteristics
75TC=- 55 °CRDS(on)- On-Resistance(Ω)gfs-Transconductance(S)600.0270.036Transfer Characteristics
45TC=25 °CTC=125 °C0.018VGS=10V300.00915001020304050ID-DrainCurrent(A)0.000020406080100ID-DrainCurrent(A)Transconductance0.10ID=15ARDS(on)- On-Resistance(Ω)0.08C - Capacitance(pF)28003500On-Resistance vs. Drain Current
Ciss0.0621000.04TA=150 °C14000.02TA=25 °C0.0045678910700Coss0Crss020406080100VGS-Gate-to-SourceVoltage(V)VDS-Drain-to-SourceVoltage(V)On-Resistance vs. Gate-to-Source VoltageCapacitance
Document Number: 68817S-81956-Rev. B, 25-Aug-08www.vishay.com
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New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
20ID=20AVGS- Gate-to-SourceVoltage(V)RDS(on)- On-Resistance(Normalized)15VDS=50VVDS=80V102.02.5ID=15AVGS=10V1.551.000204060801000.5- 50- 250255075100125150175Qg-TotalGateCharge(nC)TJ-JunctionTemperature(°C)Gate Charge100TJ=150 °CTJ=25 °C1VGS(th)Variance(V)0.7On-Resistance vs. Junction Temperature
10IS- SourceCurrent(A)0.2- 0.3ID=5mA- 0.80.1- 1.30.01- 1.8ID=250 µA0.0010.00.20.40.60.81.01.2- 2.3- 50- 250255075100125150175VSD-Source-to-DrainVoltage(V)TJ-Temperature(°C)Source-Drain Diode Forward Voltage
300600Threshold Voltage
240500400Power(W)180Power(W)300120TA=25 °C60200TC=25 °C10000.00100.010.11Time(s)1010010000.0010.010.1Time(s)110Single Pulse Power, Junction-to-AmbientSingle Pulse Power, Junction-to-Case
www.vishay.com4Document Number: 68817S-81956-Rev. B, 25-Aug-08
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New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
10001000100ID-DrainCurrent(A)ID-DrainCurrent(A)LimitedbyRDS(on)*10µs,100µs100LimitedbyRDS(on)*10µs,100µs1ms10ms100ms, DC101ms110ms100ms0.1TA=25 °CSinglePulse1s10s100s, DC1010010001010.1TC=25 °CSinglePulse0.010.11.00.010.11.0101001000VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecifiedVDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecifiedSafe Operating Area, Junction-to-Ambient
1060Safe Operating Area, Junction-to-Case
8ID-DrainCurrent(A)ID-DrainCurrent(A)50PackageLimited406304202100025507510012515017500255075100125150175TA-AmbientTemperature(°C)TC-CaseTemperature(°C)Current Derating**, Junction-to-AmbientCurrent Derating**, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.
Document Number: 68817S-81956-Rev. B, 25-Aug-08www.vishay.com
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New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
4.03.53.0Power(W)2.52.01.51.00.50.00255075100125150175180160140120Power(W)1008060402000255075100125150175TA-AmbientTemperature(°C)TC-CaseTemperature(°C)Power Derating*, Junction-to-AmbientPower Derating*, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.
www.vishay.com6Document Number: 68817S-81956-Rev. B, 25-Aug-08
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New Product
SUU50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
1NormalizedEffectiveTransientThermalImpedanceDutyCycle=0.50.20.10.1Notes:PDMt1t21.DutyCycle,D=t1t20.052.PerUnitBase=RthJA=95 °C/W0.02SinglePulse0.0110-410-310-210-11103.TJM-TA=PDMZthJA(t)4.SurfaceMounted1001000SquareWavePulseDuration(s)Normalized Thermal Transient Impedance, Junction-to-Ambient1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.10.050.02SinglePulse0.0110-410-310-2SquareWavePulseDuration(s)10-11Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?68817.
Document Number: 68817S-81956-Rev. B, 25-Aug-08www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
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