1N5820

1N5820 and 1N5822 are Preferred Devices

Axial Lead Rectifiers

This series employs the Schottky Barrier principle in a large areametal−to−silicon power diode. State−of−the−art geometry featureschrome barrier metal, epitaxial construction with oxide passivationand metal overlap contact. Ideally suited for use as rectifiers inlow−voltage, high−frequency inverters, free wheeling diodes, andpolarity protection diodes.

Features

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••••••

Extremely Low VF

Low Power Loss/High Efficiency

Low Stored Charge, Majority Carrier ConductionShipped in plastic bags, 500 per bag

Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix tothe part number

These devices are manufactured with a Pb−Free external leadfinish only*

SCHOTTKY BARRIERRECTIFIERS3.0 AMPERES20, 30, 40 VOLTSMechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 1.1 gram (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal••

Leads are Readily Solderable

Lead and Mounting Surface Temperature for Soldering Purposes:220°C Max. for 10 Seconds, 1/16 in from casePolarity: Cathode indicated by Polarity Band

AXIAL LEADCASE 267−05(DO−201AD)STYLE 1MARKING DIAGRAM1N582x1N582x= Device Codex= 0, 1 or 2ORDERING INFORMATIONSee detailed ordering and shipping information on page 2 ofthis data sheet.Preferred devices are recommended choices for future useand best overall value.

*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 20041

December, 2004 − Rev. 6

Publication Order Number:

1N5820/D

1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

RatingPeak Repetitive Reverse VoltageWorking Peak Reverse VoltageDC Blocking VoltageNon−Repetitive Peak Reverse VoltageRMS Reverse VoltageAverage Rectified Forward Current (Note 1)VR(equiv) v 0.2 VR(dc), TL = 95°C(RqJA = 28°C/W, P.C. Board Mounting, see Note 5)Ambient TemperatureRated VR(dc), PF(AV) = 0RqJA = 28°C/WNon−Repetitive Peak Surge Current(Surge applied at rated load conditions, half wave, single phase60 Hz, TL = 75°C)Operating and Storage Junction Temperature Range(Reverse Voltage applied)Peak Operating Junction Temperature (Forward Current applied)SymbolVRRMVRWMVRVRSMVR(RMS)IO1N5820201N5821301N582240UnitV241436213.04828VVATA908580°CIFSM80 (for one cycle)ATJ, TstgTJ(pk)65 to +125 15°C°CMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limitvalues (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,damage may occur and reliability may be affected.

*THERMAL CHARACTERISTICS (Note 5)

CharacteristicThermal Resistance, Junction−to−AmbientSymbolRqJAMax28Unit°C/W*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)

CharacteristicMaximum Instantaneous Forward Voltage (Note 2)(iF = 1.0 Amp)(iF = 3.0 Amp)(iF = 9.4 Amp)Maximum Instantaneous Reverse Current@ Rated dc Voltage (Note 2)TL = 25°CTL = 100°C1.Lead Temperature reference is cathode lead 1/32″ from case.2.Pulse Test: Pulse Width = 300 ms, Duty Cycle =2.0%.*Indicates JEDEC Registered Data for 1N5820−22.

SymbolVF0.3700.4750.850iR2.0202.0202.0200.3800.5000.9000.3900.5250.950mA1N58201N58211N5822UnitVORDERING INFORMATION

Device1N58201N5820RL1N58211N5821RL1N58221N5822RLPackageAxial LeadAxial LeadAxial LeadAxial LeadAxial LeadAxial LeadShipping†500 Units/Bag1500/Tape & Reel500 Units/Bag1500/Tape & Reel500 Units/Bag1500/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

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1N5820, 1N5821, 1N5822

NOTE 3 — DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermalrunaway must be considered when operating this rectifier atreverse voltages above 0.1 VRWM. Proper derating may beaccomplished by use of equation (1).

TA(max) = TJ(max) * RqJAPF(AV) * RqJAPR(AV)(1)whereTA(max) = Maximum allowable ambient temperature

TJ(max) = Maximum allowable junction temperature

(125°C or the temperature at which thermalrunaway occurs, whichever is lowest)

PF(AV) = Average forward power dissipationPR(AV) = Average reverse power dissipationRqJA = Junction−to−ambient thermal resistanceFigures 1, 2, and 3 permit easier use of equation (1) bytaking reverse power dissipation and thermal runaway intoconsideration. The figures solve for a reference temperatureas determined by equation (2).

TR = TJ(max) * RqJAPR(AV)

Substituting equation (2) into equation (1) yields:

TA(max) = TR * RqJAPF(AV)

(3)

Inspection of equations (2) and (3) reveals that TR is theambient temperature at which thermal runaway occurs orwhere TJ = 125°C, when forward power is zero. Thetransition from one boundary condition to the other isevident on the curves of Figures 1, 2, and 3 as a differencein the rate of change of the slope in the vicinity of 115°C. Thedata of Figures 1, 2, and 3 is based upon dc conditions. For

Table 1. Values for Factor F

CircuitLoadSine WaveSquare WaveHalf WaveResistive0.50.75Capacitive*1.31.5Full Wave, BridgeResistive0.50.75Capacitive0.650.75Full Wave,Center Tapped*†Resistive1.01.5Capacitive1.31.5use in common rectifier circuits, Table 1 indicates suggestedfactors for an equivalent dc voltage to use for conservativedesign, that is:

VR(equiv) = V(FM) F(4)The factor F is derived by considering the properties of thevarious rectifier circuits and the reverse characteristics ofSchottky diodes.

EXAMPLE: Find TA(max) for 1N5821 operated in a12−volt dc supply using a bridge circuit with capacitive filtersuch that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, InputVoltage = 10 V(rms), RqJA = 40°C/W.

Step 1. Find VR(equiv). Read F = 0.65 from Table 1,

NVR(equiv) = (1.41) (10) (0.65) = 9.2 V.

Step 2. Find TR from Figure 2. Read TR = 108°C

@ VR = 9.2 V and RqJA = 40°C/W.

Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W

@

I(FM)

+10andIF(AV)+1.0A.I(AV)

(2)

Step 4. FindTA(max) from equation (3).

TA(max) = 108 * (0.85) (40) = 74°C.

**Values given are for the 1N5821. Power is slightly lowerfor the 1N5820 because of its lower forward voltage, andhigher for the 1N5822. Variations will be similar for theMBR−prefix devices, using PF(AV) from Figure 6.

*Note that VR(PK) [ 2.0 Vin(PK).

†Use line to center tap voltage for Vin.

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1N5820, 1N5821, 1N5822

125TR, REFERENCE TEMPERATURE ( ° C)20125

108.0TR, REFERENCE TEMPERATURE ( ° C)1520115

15108.0115

105

RqJA (°C/W) = 7095

50408575

28105

RqJA (°C/W) = 7095

50408575

282.03.04.05.07.01015203.04.05.07.010152030

VR, REVERSE VOLTAGE (VOLTS)VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Maximum Reference Temperature

1N5820

125TR, REFERENCE TEMPERATURE ( ° C)20RqJL, THERMAL RESISTANCEJUNCTION−TO−LEAD ( ° C/W)115105

RqJA (°C/W) = 70508575

4.0

40285.0

7.0

10

15

20

30

40

15108.0403530252015105.000

Figure 2. Maximum Reference Temperature

1N5821

MAXIMUMTYPICAL95

BOTH LEADS TO HEATSINK,EQUAL LENGTH1/8

2/8

3/8

4/8

5/8

6/8

7/8

1.0

VR, REVERSE VOLTAGE (VOLTS)

L, LEAD LENGTH (INCHES)

Figure 3. Maximum Reference Temperature

1N5822

Figure 4. Steady−State Thermal Resistance

1.0

r(t), TRANSIENT THERMAL RESISTANCE(NORMALIZED)0.50.30.20.10.050.030.020.01

0.2

0.5

1.0

2.0

5.0

10

20

50t, TIME (ms)

The temperature of the lead should be measured using a ther-mocouple placed on the lead as close as possible to the tie point.The thermal mass connected to the tie point is normally largeenough so that it will not significantly respond to heat surgesgenerated in the diode as a result of pulsed operation oncesteady−state conditions are achieved. Using the measured val-ue of TL, the junction temperature may be determined by:TJ = TL + DTJLLEAD LENGTH = 1/4″tpPpkt1PpkTIMEDUTY CYCLE = tp/t1PEAK POWER, Ppk, is peak of anequivalent square power pulse.DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where:DTJL = the increase in junction temperature above the lead temperature.r(t) = normalized value of transient thermal resistance at time, t, i.e.:r(t1 + tp) = normalized value of transient thermal resistance at timet1 + tp, etc.100

200

500

1.0 k

2.0 k

5.0 k

10 k

20 k

Figure 5. Thermal Response

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1N5820, 1N5821, 1N5822

PF(AV), AVERAGE POWER DISSIPATION (WATTS)107.05.03.02.01.00.70.50.30.20.10.1

0.2

0.3

0.50.71.0

2.0

TJ ≈ 125°CNOTE 4 − APPROXIMATE THERMAL CIRCUIT MODEL

SINE WAVEI(FM)+p󰀂(Resistive󰀂Load)I(AV)CapacitiveLoadsRqS(A)RqL(A)RqJ(A)RqJ(K)PDTL(A)TC(A)TJTC(K)TL(K)RqL(K)RqS(K)TA(K)dcSQUARE WAVETA(A)NJ5.010203.05.07.010

IF(AV), AVERAGE FORWARD CURRENT (AMP)

Figure 6. Forward Power Dissipation 1N5820−22

Use of the above model permits junction to lead thermalresistance for any mounting configuration to be found. Fora given total lead length, lowest values occur when one sideof the rectifier is brought as close as possible to the heat sink.Terms in the model signify:TA = Ambient TemperatureTC = Case TemperatureTL = Lead TemperatureTJ = Junction TemperatureRqS = Thermal Resistance, Heatsink to AmbientRqL = Thermal Resistance, Lead−to−HeatsinkRqJ = Thermal Resistance, Junction−to−CasePD = Total Power Dissipation = PF + PRPF = Forward Power DissipationPR = Reverse Power Dissipation

(Subscripts (A) and (K) refer to anode and cathode sides,respectively.) Values for thermal resistance componentsare:

RqL = 42°C/W/in typically and 48°C/W/in maximumRqJ = 10°C/W typically and 16°C/W maximum

The maximum lead temperature may be found as follows:TL = TJ(max) * n TJLwhere n TJL [ RqJL · PD

Mounting Method 1Mounting Method 3P.C. Board with2−1/2, x 2−1/2,copper surface.NOTE 5 — MOUNTING DATAData shown for thermal resistance junction−to−ambient (RqJA)for the mountings shown is to be used as typical guideline valuesfor preliminary engineering, or in case the tie point temperaturecannot be measured.TYPICAL VALUES FOR RqJA IN STILL AIRMountingMethod123Lead Length, L (in)1/850581/45159281/253613/45563RqJA°C/W°C/W°C/WP.C. Board where availablecopper surface is small.LLL = 1/2″Mounting Method 2LLBOARD GROUNDPLANEVECTOR PUSH−INTERMINALS T−28http://onsemi.com

5

1N5820, 1N5821, 1N5822

50

IFSM, PEAK HALF−WAVE CURRENT (AMP)3020

TJ = 100°C10iF, INSTANTANEOUS FORWARD CURRENT (AMP)7.05.03.02.0

25°C1007050TL = 75°Cf = 60 Hz30201 CYCLESURGE APPLIED AT RATED LOAD CONDITIONS101.02.03.05.07.01020305070100NUMBER OF CYCLESFigure 8. Maximum Non−Repetitive SurgeCurrent100502010IR, REVERSE CURRENT (mA)100°CTJ = 125°C1.00.70.50.30.2

5.02.01.00.50.20.125°C1N58201N58211N58220

4.0

8.0

12

16

20

24

28

32

36

40

75°C0.10.070.05

00.10.20.30.40.50.60.70.80.91.01.11.21.31.4vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)0.050.020.01VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Forward Voltage500

1N5820300200

TJ = 25°Cf = 1.0 MHz10070

0.50.71.0

2.0

3.0

5.07.0

10

1N582220

301N5821Figure 9. Typical Reverse Current

C, CAPACITANCE (pF)NOTE 6 — HIGH FREQUENCY OPERATION

Since current flow in a Schottky rectifier is the result ofmajority carrier conduction, it is not subject to junctiondiode forward and reverse recovery transients due to minor-ity carrier injection and stored charge. Satisfactory circuitanalysis work may be performed by using a model consist-ing of an ideal diode in parallel with a variable capacitance.(See Figure 10.)

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

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1N5820, 1N5821, 1N5822

PACKAGE DIMENSIONS

AXIAL LEADCASE 267−05(DO−201AD)ISSUE G

KD1A2NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

INCHESMINMAX0.2870.3740.1890.2090.0470.0511.000−−−

MILLIMETERS

MINMAX7.309.504.805.301.201.3025.40−−−

BKDIM

ABDK

STYLE 1:

PIN 1.CATHODE (POLARITY BAND)

2.ANODE

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1N5820, 1N5821, 1N5822

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll FreeUSA/CanadaJapan: ON Semiconductor, Japan Customer Focus Center2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051Phone: 81−3−5773−3850http://onsemi.com81N5820/D