Electrostatic chucks and process for producing the

专利名称：Electrostatic chucks and process for

producing the same

发明人：Hideyoshi Tsuruta申请号：US10004736申请日：20011204公开号：US06636413B2公开日：20031021

专利附图：

摘要：An electrostatic chuck including a dielectric layer made of aluminum nitride, aninner electrode buried in the dielectric layer, and a surface layer covering a surface of thedielectric layer. The surface layer is made of a material harder than the aluminum nitride

constituting the dielectric layer and having a thickness of not less than 200 nm, and thesurface of the dielectric layer has a center-line average surface roughness of not morethan 25 nm. The electrostatic chuck is adapted to adsorb a wafer onto the dielectric layerthrough the surface layer.

申请人：NGK INSULATORS, INC.

代理机构：Burr & Brown

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