专利名称：Method of fabricating and integrating high
quality decoupling capacitors
发明人：David Jerome Mountain申请号：US11149029申请日：20050609公开号：US07297613B1公开日：20071120
专利附图：
摘要：Method of making an integrated passive, such as a high quality decouplingcapacitor, includes providing a first temporary support, a silicon capacitor wafer, andproviding an oxide layer and a conductive layer on it. Then, a second temporary support,
such as a handle wafer, may be attached to the capacitor wafer (i.e., to the oxide layer onit) by an adhesive bond. The capacitor wafer may then be destructively removed. Asecond conductive layer is then provided on an exposed backside of the oxide layer. Theaddition of a second electrode on the second conductive layer yields the desired highquality capacitor. Further processing steps, such as solder bumping, may be carried outwhile the capacitor wafer is still attached to the handle wafer. When the desired
processing steps are complete, the handle wafer is removed, and the relatively thin highquality integrated capacitor wafer results.
申请人：David Jerome Mountain
地址：Baltimore MD US
国籍：US
代理机构：Shlesinger, Arkwright & Garvey, LLP
代理人：Terrence L. B. Brown
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